STS7DNF30L dual n - channel 30v - 0.018 w - 7a so-8 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.018 w n standard outline for easy automated surface mount assembly n low threshold drive description this power mosfet is the second generation of stmicroelectronics unique o single feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n dc motor drive n dc-dc converters n battery managment in nomadic equipment n power management in portable/desktop pc s ? internal schematic diagram november 1999 so-8 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain- gate voltage (r gs =20k w )30v v gs gate-source voltage 20 v i d drain current (continuous) at tc = 25 o c single operation drain current (continuous) at t c =100 o c single operation 7 4 a a i dm ( ? ) drain current (pulsed) 28 a p tot total dissipation at t c =25 o c dual operation total dissipation at t c =25 o csinlgeoperation 2 1.6 w w ( ? ) pulse width limited by safe operating area type v dss r ds(on) i d STS7DNF30L 30 v < 0.022 w 7a 1/6
thermal data r thj-amb t j t stg *thermal resistance junction-ambient single operation dual operation maximum operating junction temperature storage temperature 78 62.5 150 -65 to 150 o c/w o c/w o c o c (*) mounted on fr-4 board (steady state) electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a11.62.5v r ds(on) static drain-source on resistance v gs =10v i d =3.5a v gs =4.5v i d =3.5a 0.018 0.021 0.022 0.026 w w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =3.5a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 v 1050 250 85 pf pf pf STS7DNF30L 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =15v i d =3.5a r g =4.7 w v gs =4.5v (resistive load, see fig. 3) 22 60 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v i d =8a v gs = 5 v 17.5 4 7 23 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =15v i d =3.5a r g =4.7 w v gs =4.5v (resistive load, see fig. 3) 42 10 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp =24v i d =7a r g =4.7 w v gs =4.5v (inductive load, see fig. 5) 11 12 25 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 8 32 a a v sd ( * )forwardonvoltage i sd =7a v gs =0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =7a di/dt=100a/ m s v dd =20v t j =150 o c (see test circuit, fig. 5) 50 40 1.6 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STS7DNF30L 3/6
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STS7DNF30L 4/6
dim. mm inch min. typ. max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) 0016023 so-8 mechanical data STS7DNF30L 5/6
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